Podcasts by Making an Integrated Circuit

This podcast is drawn from the Virtual Lab presentations of WeCanFigureThisOut.org. The copyrighted material of this site was developed under funding from National Science Foundation CCLI, NIRT, MRSEC and NUE programs. This project is led by John C. Bean from 2021-01-31T22:10:42.023393

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All of the scenes together from 2021-01-31T22:10:42.023393

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To make this transistor, first oxide then nitride layers are grown from 2021-01-31T22:10:42.023393

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A shadow mask then exposes a photographic emulsion from 2021-01-31T22:10:42.023393

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Exposed nitride is then etched away from 2021-01-31T22:10:42.023393

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Oxygen reacts with the Si to grow more oxide from 2021-01-31T22:10:42.023393

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By heating in silane, polycrystal Si is then grown from 2021-01-31T22:10:42.023393

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A stripe is exposed in a second photographic emulsion from 2021-01-31T22:10:42.023393

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Exposed polycrystal Si is etched away leaving the transistor gate from 2021-01-31T22:10:42.023393

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Phosphorus ions then penetrate thin oxide to create the source and drain from 2021-01-31T22:10:42.023393

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Heating in oxygen grows an insulating coat on the gate from 2021-01-31T22:10:42.023393

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A third photographic emulsion defines windows above the source and drain from 2021-01-31T22:10:42.023393

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Openings are then etched in the exposed oxide from 2021-01-31T22:10:42.023393

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Metal is sprayed on to the surface from 2021-01-31T22:10:42.023393

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Unwanted metal is etched away completing the transistor from 2021-01-31T22:10:42.023393

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And finally, here is the circuit symbol for the transistor from 2021-01-31T22:10:42.023393

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All of the scenes together from 2017-07-24T11:59

All of the scenes together from 2017-07-24T11:59